Search results for "Elemental Semiconductors"
showing 3 items of 3 documents
Electron-phonon heat transport and electronic thermal conductivity in heavily doped silicon-on-insulator film
2003
Electron–phonon interaction and electronic thermal conductivity have been investigated in heavily doped silicon at subKelvin temperatures. The heat flow between electron and phonon systems is found to be proportional to T6. Utilization of a superconductor–semiconductor–superconductor thermometer enables a precise measurement of electron and substrate temperatures. The electronic thermal conductivity is consistent with the Wiedemann–Franz law. Peer reviewed
2D photonic defect layers in 3D inverted opals on Si platforms
2006
Dielectric spheres synthesised for the fabrication of self-organized photonic crystals such as opals offer large opportunities for the design of novel nanophotonic devices. In this paper, we show a hexagonal superlattice monolayer of dielectric spheres inscribed on a 3D colloidal photonic crystal by e-beam lithography. The crystal is produced by a variation of the vertical drawing deposition method assisted by an acoustic field. The structures were chosen after simulations showed that a hexagonal super-lattice monolayer in air exhibits an even photonic band gap below the light cone if the refractive index of the spheres is higher than 1.93.
High accuracy Raman measurements using the Stokes and anti-Stokes lines
1997
We show that by measuring the separation between the Stokes and anti-Stokes peaks excited by two different laser lines we obtain a very precise determination of absolute phonon energies. The method is useful for measuring small changes of these energies with strain, temperature, laser power, etc. It doubles the changes and avoids the necessity of using the reference lines in the Raman spectra. The method can be applied for the determination of phonon deformation potentials, for the characterization of strained heteroepitaxial layers, and for micro-Raman analysis of strain in silicon integrated circuits. We give examples of phonon shifts in Si, Ge, GaAs, InAs, and GaP as a function of applie…